Heterojunctions of TiO2 nanoparticle film and c-Si with different Fermi level positions
Heterojunctions of TiO2 nanoparticle film and c-Si with different Fermi level positions
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不同费米能级位置的TiO2纳米粒子薄膜与c-Si的异质结
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
G. Qin
中科院分区：
文献类型：
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作者：
A. Watanabe;G. Qin
研究了二氧化钛（TiO2）纳米粒子薄膜与不同费米能级（Ef）位置的单晶硅（c-Si）衬底异质结的光伏性能。研究了金红石和锐钛矿结构的 TiO2 纳米颗粒，无需任何烧结过程。为了阐明光伏性能，研究了具有 p-Si 和 n-Si 衬底的 TiO2 纳米颗粒薄膜异质结太阳能电池的特性，其中使用了几种具有不同电阻率的 Si 衬底。 p-Si/TiO2异质结的I-V特性显示了整流行为和光伏效应。 n-Si/TiO2异质结也表现出良好的整流特性；然而，其转换效率远低于p-Si/TiO2异质结。各种Si/TiO2（金红石）异质结太阳能电池相对于c-Si 费米能级Ef 的转换效率在p 掺杂区域显示出最大值。 Si/TiO2异质结的光伏性能还取决于TiO2的晶体结构，锐钛矿型的转换效率高于金红石型，这归因于锐钛矿型较高的载流子迁移率。
The photovoltaic properties of heterojunctions of titanium dioxide (TiO2) nanoparticle films with single crystal silicon (c-Si) substrates with different Fermi level (Ef) positions were studied. The TiO2 nanoparticles of rutile and anatase structures were studied without any sintering process. To clarify the photovoltaic properties, the characteristics of the heterojunction solar cells of TiO2 nanoparticle films with p-Si and n-Si substrates were investigated, where several Si substrates with different resistivities were used. The I–V characteristics of p-Si/TiO2 heterojunction showed the rectifying behavior and photovoltaic effect. The n-Si/TiO2 heterojunction also showed good rectifying characteristics; however, the conversion efficiency was extremely lower than that of p-Si/TiO2 heterojunction. The conversion efficiencies of various Si/TiO2 (rutile) heterojunction solar cells against the Fermi level Ef of c-Si showed the maximum in the p-doped region. The photovoltaic properties of the Si/TiO2 heterojunction also depended on the crystal structure of TiO2, and the conversion efficiency of anatase is higher than that of rutile, which was attributed to the higher carrier mobility of anatase.