Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation
复制标题
设计 GaN 垂直 p-i-n 二极管的斜边端接 - 斜角、掺杂和钝化
DOI：
10.1109/ted.2020.2987040
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发表时间：
2020
影响因子：
3.1
通讯作者：
S. Chowdhury
中科院分区：
文献类型：
--
作者：
Ke Zeng;S. Chowdhury
对具有负斜角端接的氮化镓 (GaN) p-i-n 垂直二极管进行了一系列电场分布仿真，以优化斜角设计。斜角以相当小的增量从 90° 变化到 0.1°，以研究斜角对电场分布的影响。掺杂浓度也有所不同，以研究更普遍的趋势；提出了一个定义为过渡角 $\theta _{{\text {t}}}$ 的新参数来表征斜角边缘终止的有效性。考虑到器件制造过程中斜角侧壁上潜在的干蚀刻损伤，还单独添加了悬空键的固定表面电荷和常用的电介质钝化以研究其影响。本文对具有负斜角边缘终端的 GaN p-i-n 二极管进行了全面的仿真研究，使其成为设计简单有效的斜角边缘终端的有用指南，最终有助于实现 GaN p-i-n 二极管中的常规雪崩。
A series of electric field profile simulations in gallium nitride (GaN) p-i-n vertical diodes with negative bevel termination is carried out to optimize the bevel design. The bevel angles are varied from 90° to 0.1° with reasonably small increments to study the impact of the bevel angle on the electric field profile. The doping densities are also varied to study a more generalized trend; a new parameter defined as transition angle $\theta _{{\text {t}}}$ is proposed to characterize the effectivity of a beveled edge termination. Considering the potential dry etch damage on the bevel side-wall during device fabrication, the fixed surface charge from the dangling bonds and commonly used dielectric passivation are also added separately to investigate their influence. This article presents a comprehensive simulation study of GaN p-i-n diode with negative beveled edge termination, making it a useful guide for designing a simple and effective beveled edge termination, which eventually helps to enable the routine avalanche in GaN p-i-n diodes.