Low-energy electrodynamics of SmB6
Low-energy electrodynamics of SmB6
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DOI：
10.1103/physrevb.59.1808
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发表时间：
1999-01-15
影响因子：
3.7
通讯作者：
Kunii, S
中科院分区：
文献类型：
--
作者：
Gorshunov, B;Sluchanko, N;Kunii, S
我们直接测量了单晶SmB6在0.6-4.5 meV，即杂化能隙以下的低温动态电导率和介电常数。所得结果与霍尔效应和红外反射测量数据相结合，证明了态密度存在19 meV的能隙，并且在上导带底部下方仅有3 meV的窄施主类型的能带。结果表明，在5K温度下，
We have performed direct measurements of the low-temperature dynamical conductivity and dielectric permittivity of single crystalline SmB6 in the spectral range from 0.6 to 4.5 meV, i.e., below the hybridization gap. The obtained results together with the data of Hall-effect and infrared reflection measurements give evidence for a 19-meV energy gap in the density of states and an additional narrow donor-type band lying only 3 meV below the bottom of the upper conduction band. It is shown that at temperatures 5 K