Research on Capacitor-Switching Semi-Full-Bridge Submodule of Modular Multilevel Converter Using Si-IGBT and SiC-MOSFET
Research on Capacitor-Switching Semi-Full-Bridge Submodule of Modular Multilevel Converter Using Si-IGBT and SiC-MOSFET
复制标题
采用Si-IGBT和SiC-MOSFET的模块化多电平变换器电容开关半全桥子模块研究
DOI：
10.1109/jestpe.2020.3034451
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发表时间：
2021-08
影响因子：
5.5
通讯作者：
Lei Lin
中科院分区：
文献类型：
--
作者：
Chen Xu;Jialu He;Lei Lin
本文提出了一种用于模块化多电平变换器（MMC）的采用Si-IGBT和SiC-MOSFET的电容开关半全桥（CS-SFB）子模块（SM）。与传统的混合半/全桥MMC相比，CS-SFB MMC具有相同的直流故障穿越能力和更低的功率损耗。由于Si-IGBT和SiC-MOSFET之间的电流共享现象，导通损耗降低。由于SiC二极管的快速恢复特性，开关损耗降低。首先介绍了该同步电机的工作原理和推导过程。然后，分别在开关、SM和MMC系统级建立功率损耗模型。最后，通过分段计算和仿真，验证了所提出的SM和MMC的低功耗特性。最后，这些功能得到验证的实验结果，从缩小MMC原型与Si-IGBT和SiC-MOSFET。
This article presents a capacitor-switching semi-full-bridge (CS-SFB) submodule (SM) using Si-IGBT and SiC-MOSFET for a modular multilevel converter (MMC). Compared with the conventional hybrid half-/full-bridge MMC, the CS-SFB MMC has the same dc fault ride-through capability and lower power losses. The conduction loss reduces due to the current sharing phenomenon between Si-IGBTs and SiC-MOSFETs. The switching loss reduces in virtue of the fast recovery characteristic of SiC-diode. The derivation process and working principle of the proposed SM are first introduced. Then, the power loss models are established in the switch, SM, and MMC system levels, respectively. Afterward, the piecewise calculation and simulation results reveal the low-power-loss characteristics of the proposed SM and MMC. Finally, these features are verified by experimental results acquired from a downscaled MMC prototype with Si-IGBTs and SiC-MOSFETs.