Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle
Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle
复制标题
通过优化台面侧壁角度提高AlGaN基深紫外发光二极管的光功率
DOI：
10.1109/jphot.2018.2850038
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发表时间：
2018-08-01
影响因子：
2.4
通讯作者：
Chen, Changqing
中科院分区：
文献类型：
--
作者：
Chen, Qian;Zhang, Huixue;Chen, Changqing
在这项工作中，我们提出并优化了台面的侧壁，以增强 AlGaN 基深紫外发光二极管 (LED) 的光功率。通过干法刻蚀得到具有倾斜侧壁的台面。通过将积分球放置在器件的蓝宝石一侧来测试具有不同倾角的LED器件的光学性能。与参考器件相比，最佳角度为 37.83 度的 DUV LED 在 35 A/cm(2) 的电流密度下产生 48% 的光功率增强。还从理论上和实验上讨论了台面倾角对光提取效率影响的物理机制。然后，我们发现，一旦在台面侧壁上涂覆的绝缘二氧化硅上蒸镀铝反射器，TM偏振DUV光子的光提取效率和光功率可以进一步提高。
In this work, we propose and optimize the sidewalls for the mesa to enhance the optical power for AlGaN-based deep ultraviolet light-emitting diodes (LEDs). We obtain the mesa with the inclined sidewalls by conducting dry etching. The optical performance for LED devices with different inclination angles are tested by putting the integrated sphere on the sapphire side of the devices. The DUV LED with the optimal angle of 37.83 degrees yields the 48% optical power enhancement at the current density of 35 A/cm(2) as compared with the reference device. The physical mechanism for the impact of the mesa inclination angle on the light extraction efficiency is also discussed both theoretically and experimentally. Then, we find that once the Al reflector is evaporated on the insulated silica dioxide that is coated on the sidewall of the mesa, the light extraction efficiency for the TM-polarized DUV photons and the optical power can be further improved.