Synthesis and electron-transport properties of N-trifluoromethylphenyl-phthalimides containing selenophene substituents
Synthesis and electron-transport properties of N-trifluoromethylphenyl-phthalimides containing selenophene substituents
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含硒酚取代基N-三氟甲基苯基邻苯二甲酰亚胺的合成及电子传输性能
DOI：
10.1039/d1ma00716e
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发表时间：
2021
影响因子：
5
通讯作者：
Takeshi Kawase
中科院分区：
文献类型：
--
作者：
Jun-ichi Nishida;Yoshiki Morikawa;Akito Hashimoto;Yasuyuki Kita;Hiroshi Nishimoto;Tomofumi Kadoya;Hiroyasu Sato;Takeshi Kawase
合成了三氟甲基苯基取代的含硒寡聚体和苯硒杂环取代基的邻苯二甲酰亚胺。光谱研究表明，增加硒的单位的数量导致的紫外-可见光和光致发光的最大值的硒取代PI移动到更长的波长。单晶结构分析表明，该双硒代衍生物具有层状结构，没有对称中心，分子网络中Se原子间紧密接触。PI衍生物的XRD图谱表明它们具有相似的层状结构。这些物质被用来制造场效应晶体管（FET），通过使用气相沉积方法。使用双硒代PI衍生的FET表现出明显的n型特性，电子迁移率约为100%。10−4 cm2 V−1 s−1。使用更高度共轭的三硒代衍生物制备的FET也显示出具有略高阈值电压的n型FET特性。此外，由苯基硒代衍生物生成的高度结晶的薄膜也显示出n型行为。研究了LED光响应FET特性。虽然由三硒代衍生物形成的FET保持饱和漏极-源极电流（IDS）操作沿着三倍增加的电子迁移率，但由二硒代和苯硒代衍生物形成的FET显示欧姆定律样IDS。光响应的差异进行了讨论的电导率差异。
Trifluoromethylphenyl substituted phthalimides (PIs) containing oligoselenophene and phenylselenophene substituents were synthesized. Spectroscopic studies show that increasing the number of selenophene units causes the UV-Vis and photoluminescence maxima of the selenophene substituted PIs to shift to longer wavelengths. Analysis of the single crystal structure shows that the biselenophene substituted derivative has a layered structure, no center of symmetry and a molecular network with close contacts between Se atoms. XRD patterns of the PI derivatives indicate they have similar layered structures. These substances were used to fabricate field-effect transistors (FET)s by using the vapor deposition method. The FET derived using the biselenophene substituted PI exhibits clear n-type characteristics with an electron mobility of ca. 10−4 cm2 V−1 s−1. The FET prepared using the more highly conjugated terselenophene derivative also displays n-type FET characteristics with a slightly higher threshold voltage. Moreover, n-type behavior is also displayed by a highly crystalline thin film generated from the phenylselenophene derivative. The LED light responsiveness of FET characteristics was investigated. While the FET formed from the terselenophene derivative maintains a saturation drain–source current (IDS) operation along with a three-fold increase of electron mobility upon irradiation, those derived from the biselenophene and phenylselenophene derivatives display Ohm's law-like IDS. The difference in light responses are discussed in terms of conductivity differences.