Calculation of Spin-Dependent Interface Resistance
Calculation of Spin-Dependent Interface Resistance
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DOI：
10.1103/physrevb.61.3200
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发表时间：
2000
影响因子：
3.7
通讯作者：
M. Stiles;D. R. Penn
中科院分区：
文献类型：
--
作者：
M. Stiles;D. R. Penn
Schep等人已经推导出两种材料之间界面电阻的简单表达式。[J.妈妈妈妈脱线。177，1166（1998）]中计算。这种近似测试一个简单的模型接口和良好的协议被发现与玻尔兹曼方程的解决方案。以前计算的值的传输概率与这个简单的表达式来评估自旋相关的界面电阻的铁磁正常金属界面的数量。计算结果和Cu/Co实验结果之间的一致性表明，界面电阻并不像通常认为的那样由缺陷散射决定。
A simple expression for the interface resistance between two materials has been derived by Schep et al.[J. Magn. Magn. Mater. 177, 1166 (1998)] in terms of the transmission probability for electrons at the interface. This approximation is tested for a simple model interface and good agreement is found with solutions of the Boltzmann equation. Previously calculated values of the transmission probability are used with this simple expression to evaluate the spin-dependent interface resistances of a number of ferromagnetic-normal metal interfaces. The agreement between the calculated results and the results extracted from experiments on Cu/Co argue that the interface resistance may not be dominated by defect scattering as is often assumed.