Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission
Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission
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DOI：
10.1021/acsphotonics.6b00572
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发表时间：
2016-10
期刊：
影响因子：
7
通讯作者：
Jong Woon Lee;J. H. Park;Dong Yeong Kim;E. Schubert;Jungsub Kim;Jinsub Lee;Yong-ll Kim;Young-soo P
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文献类型：
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作者：
Jong Woon Lee;J. H. Park;Dong Yeong Kim;E. Schubert;Jungsub Kim;Jinsub Lee;Yong-ll Kim;Young-soo P
尽管对有效的人造深紫外（DUV）光源的需求迅速增长，但AlGaN基DUV发光二极管（LED）的广泛采用目前由于AlGaN有源区的固有材料性质而受到DUV光子的极差提取的阻碍。在这里，我们提出了280 nm AlGaN深紫外LED具有截头圆锥（TC）形的有源台面的阵列涂覆有MgF 2/Al反射器上的圆锥体的倾斜侧壁上，以有效地提取固有的强横向磁极化发射。光线追迹模拟表明，TC深紫外LED显示出各向同性的发射模式和大大增强的光输出功率相比，条形深紫外LED具有相同的MgF 2/Al反射器。与光线跟踪模拟结果一致，TC DUV LED显示出各向同性的发射模式，具有比条形DUV LED高得多的光输出功率以及低得多的工作电压。在此基础上，提出了高性能复合材料的设计策略。
Despite a rapidly growing demand for efficient man-made deep-ultraviolet (DUV) light sources, widespread adoption of AlGaN-based DUV light-emitting diodes (LEDs) is currently obstructed by extremely poor extraction of DUV photons due to the intrinsic material properties of the AlGaN active region. Here, we present 280 nm AlGaN DUV LEDs having arrays of truncated cone (TC)-shaped active mesas coated with MgF2/Al reflectors on the inclined sidewalls of the cone to effectively extract the intrinsically strong transverse-magnetic-polarized emission. Ray tracing simulations reveal that the TC DUV LEDs show an isotropic emission pattern and much enhanced light-output power in comparison with stripe-type DUV LEDs with the same MgF2/Al reflectors. Consistent with the ray tracing simulation results, the TC DUV LEDs show an isotropic emission pattern with much higher light-output power as well as lower operating voltage than the stripe-type DUV LEDs. On the basis of our results, strategies for designing high-perfor...