Interface Properties of 4H-SiC ( $11ar {2}0$ ) and ( $1ar {1}00$ ) MOS Structures Annealed in NO
Interface Properties of 4H-SiC ( $11ar {2}0$ ) and ( $1ar {1}00$ ) MOS Structures Annealed in NO
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NO 中退火的 4H-SiC ( $11ar {2}0$ ) 和 ( $1ar {1}00$ ) MOS 结构的界面特性
DOI：
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发表时间：
2015
影响因子：
3.1
通讯作者：
T. Kimoto
中科院分区：
文献类型：
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作者：
S. Nakazawa;T. Okuda;J. Suda;Takashi Nakamura;T. Kimoto
采用电导法、高低频法和C - ψ<sub>s</sub>法对4H - SiC（112̅0）和（11̅00）晶面的界面特性、结型场效应晶体管（JFET）电阻的缺失以及在一氧化氮中退火的更高金属 - 氧化物 - 半导体（MOS）结构进行了表征。与4H - SiC（0001）MOS结构相比，4H - SiC（112̅0）和（11̅00）晶面在氮化过程中产生的极快界面态要少得多。在掺杂浓度为1×10<sup>17</sup> cm<sup>-3</sup>的Al⁺注入p型体上制备的平面MOSFET，在（11̅00）晶面上的有效迁移率为10<sup>3</sup> cm<sup>2</sup>/Vs，在（112̅0）晶面上为92 cm<sup>2</sup>/Vs，在（0001）晶面上为20 cm<sup>2</sup>/Vs。根据实验结果讨论了迁移率限制因素。（112̅0）和（11̅00）MOSFET的高沟道迁移率可能与氮化产生的快速界面态密度较低有关。
Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric oxide are characterized by conductance, high-low, and C-ψ<sub>s</sub> methods. Compared with 4H-SiC (0001) MOS structures, generation of very fast interface states by nitridation is much smaller in 4H-SiC (112̅0) and (11̅00). The effective mobility of planar MOSFETs fabricated on Al+-implanted p-body doped to 1×10<sup>17</sup> cm<sup>-3</sup> is 10<sup>3</sup> cm<sup>2</sup>/Vs on (11̅00), 92 cm<sup>2</sup>/Vs on (112̅0), and 20 cm<sup>2</sup>/Vs on (0001). The mobility-limiting factors are discussed on the basis of experimental results. The high channel mobilities for (112̅0) and (11̅00) MOSFETs can be correlated with the lower density of fast interface states generated by nitridation.