Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides

Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
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发表时间:
2017
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通讯作者:
J. Island;A. Molina‐Mendoza;Mariam Barawi;R. Biele;E. Flores;J. M. Clamagirand;J. Ares;C. Sánchez;H. V. D. Zant;R. D’Agosta;I. Ferrer;A. Castellanos-Gomez
J. Island;A. Molina‐Mendoza;Mariam Barawi;R. Biele;E. Flores;J. M. Clamagirand;J. Ares;C. Sánchez;H. V. D. Zant;R. D’Agosta;I. Ferrer;A. Castellanos-Gomez
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作者:
J. Island;A. Molina‐Mendoza;Mariam Barawi;R. Biele;E. Flores;J. M. Clamagirand;J. Ares;C. Sánchez;H. V. D. Zant;R. D’Agosta;I. Ferrer;A. Castellanos-Gomez

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石墨烯和过渡金属二硫属化物的分离为大量可以随意剥离、操纵和堆叠或组合的层状材料打开了一个名副其实的世界。随着探索的不断扩大,包括其他具有独特属性的分层材料,很明显,没有一种材料能够满足所有后硅时代的要求。本文综述了层状准一维过渡金属三硫属化合物(TMTCs)作为新一代电子学和光电子学材料的性质和应用。TMTCs呈现出独特的链状结构,这使得材料具有准一维性质,如电导率和线性二向色性的高各向异性比。这类材料的带隙范围(0.2 eV 2 eV)使其适用于各种各样的应用,包括场效应晶体管,红外,可见光和紫外光探测器,以及与其各向异性特性相关的独特应用,这为下一代电子产品的开发提供了另一个自由度。在这篇综述中,我们调查的历史发展,这些显着的材料,强调最近的活动所产生的原子薄的三硫化钛(TiS3)的分离和表征。
The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).