Thermal conductivity of thermoelectric Si0.8‐Ge0.2 alloys
Thermal conductivity of thermoelectric Si0.8‐Ge0.2 alloys
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DOI：
10.1063/1.350806
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发表时间：
1992-05
影响因子：
3.2
通讯作者：
D. P. White;P. Klemens
中科院分区：
文献类型：
--
作者：
D. P. White;P. Klemens
研究了重掺杂 n 型 Si-Ge 合金在 300 至 1200 K 温度范围内的热导率。计算了几种声子散射机制的散射率，包括本征散射、质量缺陷和畸变散射、声子电子散射和夹杂物散射。然后使用这些速率来计算晶格热导率。由计算出的洛伦兹比和电导率的测量值计算出热导率的电子成分。然后将总热导率与 Vining 等人研究的样本的测量值进行比较。 [J。应用。物理。 69, 15 (1991)]。
The thermal conductivity of heavily doped, n‐type Si‐Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon‐electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al. [J. Appl. Phys. 69, 15 (1991)].