Fabrication and characteristics of tapered waveguide semiconductor Raman lasers
Fabrication and characteristics of tapered waveguide semiconductor Raman lasers
复制标题
锥形波导半导体拉曼激光器的制备及特性
DOI：
10.1049/ip-opt:19960238
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
K. Suto;Toshihiro Kimura;J. Nishizawa
报道了锥形波导结构半导体拉曼激光器的低抽运功率运转。通过控制蒸气压力和改进的生长工艺，采用温差法制备了横向和垂直两向锥形的光波导，没有引起内部光学损耗的严重增加。获得了55 mW的最低阈值泵浦功率。
Low pump-power operation of semiconductor Raman lasers with a tapered waveguide structure is reported. The waveguides are both laterally and vertically tapered and fabricated by the temperature difference method under controlled vapour pressure with liquid-phase epitaxy and an improved growth process, which has not caused any serious increase of internal optical loss. The lowest threshold pump power of 55 mW has been achieved.