GIANT, TRIPLY RESONANT, 3RD-ORDER NONLINEAR SUSCEPTIBILITY-CHI-3-OMEGA(3) IN COUPLED QUANTUM-WELLS
GIANT, TRIPLY RESONANT, 3RD-ORDER NONLINEAR SUSCEPTIBILITY-CHI-3-OMEGA(3) IN COUPLED QUANTUM-WELLS
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DOI：
10.1103/physrevlett.68.1010
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发表时间：
1992-02-17
影响因子：
8.6
通讯作者：
CHO, AY
中科院分区：
文献类型：
--
作者：
SIRTORI, C;CAPASSO, F;CHO, AY
利用分子束外延生长的AlInAs/GaInAs异质结，设计并实现了一种具有三重共振三阶非线性极化率的耦合量子阱半导体。为了最大化\chi-3-omega(3)，我们的结构被定制成最大化相关子带间跃迁的偶极矩阵元的乘积，同时保持量子阱电子束缚态之间的几乎相等的间距。在10.7微米泵浦波长下，获得了高达1×10~(-14)(m/V)~2的同余~1×10~(-14)(m/V)~2的实验值，与理论估算相一致。
A new coupled-quantum-well semiconductor with triply resonant third-order nonlinear susceptibility chi-3-omega(3) has been designed and demonstrated using AlInAs/GaInAs heterostructures grown by molecular-beam epitaxy. In order to maximize \chi-3-omega(3)\ our structure has been tailored in such a way to maximize the product of the dipole matrix elements of the relevant intersubband transitions while maintaining nearly equal spacing between the electronic bound states of the quantum wells. Experimental values of \chi-3-omega(3)\ as high as congruent-to 1 x 10(-14) (m/V)2 at 10.7-mu-m pump wavelength have been obtained, in agreement with theoretical estimates.