Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
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DOI：
10.1016/j.tsf.2009.09.133
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发表时间：
2010-02
期刊：
影响因子：
2.1
通讯作者：
G. Wang;R. Loo;S. Takeuchi;L. Souriau;J. C. Lin;A. Moussa;H. Bender;B. D. Jaeger;P. Ong;W. Lee;M. Meuris;M. Caymax;W. Vandervorst;B. Blanpain;M. Heyns
中科院分区：
文献类型：
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作者：
G. Wang;R. Loo;S. Takeuchi;L. Souriau;J. C. Lin;A. Moussa;H. Bender;B. D. Jaeger;P. Ong;W. Lee;M. Meuris;M. Caymax;W. Vandervorst;B. Blanpain;M. Heyns
