A Si–based bulk FinFET by novel etching process with mask–less and photoresist–free lithography technique

A Si–based bulk FinFET by novel etching process with mask–less and photoresist–free lithography technique
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采用无掩模、无光刻胶光刻技术的新颖蚀刻工艺制成的硅基体 FinFET

DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
W. Yeh
W. Yeh
中科院分区：
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文献类型：
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作者：
Min;Chih–Ming Wu;Y. Hou;Yi;Chang;Chia;Bo Wu;W. Yeh

文献摘要

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在这项研究中，我们使用无掩模和光刻胶的纳米注入光刻（NIL）开发一个子10 nm的鳍片宽度的硅基鳍片场效应晶体管（FinFET）与50 nm的鳍片间距。有源层采用双对准技术（电子束光刻和NIL）制作，鳍沟槽采用高密度等离子体化学气相沉积工艺完美填充。采用先进的等离子体和湿法刻蚀工艺来获得鳍的高度。所制造的FinFET可以为互补金属氧化物半导体技术的连续缩放提供寻路解决方案。
In this study, we used maskless and photoresist–free nano injection lithography (NIL) to develop a sub–10 nm fin width for a Si–based fin field–effect transistor (FinFET) with a 50–nm fin pitch. The active layer was fabricated using double alignment technology (electron–beam lithography and NIL), and the fin trench was filled perfectly by using a high–density plasma chemical vapour deposition process. Advanced plasma and wet etching processes were employed to obtain the fin height. The fabricated FinFET could provide a pathfinding solution for the continuous scaling of complementary metal oxide semiconductor technology.