Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor
Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor
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DOI：
10.1063/1.3112566
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发表时间：
2009-03-30
影响因子：
4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
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作者：
Sato, Ayumu;Abe, Katsumi;Hosono, Hideo
提出了一种非晶In-Ga-Zn-O （A - igzo）共面同质结薄膜晶体管（TFTs）的制备方法，该方法利用氢化氮化硅（SiNX:H）构成的上层保护层沉积形成的高掺杂接触区。直接沉积SiNX:H将半导体a- igzo层的电阻率降低到6.2x10(-3) ω cm，形成了接近理想的欧姆接触，寄生源漏电阻为34 ω cm。简单的场效应迁移率（mu(sat)）评估高估了它们的值，特别是对于短通道tft，而通道电阻法证明mu（sat）几乎恒定在9.5 cm(2) V-1 s（-1）。
A fabrication process of coplanar homojunction thin-film transistors (TFTs) is proposed for amorphous In-Ga-Zn-O (a-IGZO), which employs highly doped contact regions naturally formed by deposition of upper protection layers made of hydrogenated silicon nitride (SiNX:H). The direct deposition of SiNX:H reduced the resistivity of the semiconductive a-IGZO layer down to 6.2x10(-3) Omega cm and formed a nearly ideal Ohmic contact with a low parasitic source-to-drain resistance of 34 Omega cm. Simple evaluation of field-effect mobilities (mu(sat)) overestimated their values especially for short-channel TFTs, while the channel resistance method proved that mu(sat) was almost constant at 9.5 cm(2) V-1 s(-1).