Controlled lateral manipulation of molecules on insulating films by STM.
Controlled lateral manipulation of molecules on insulating films by STM.
复制标题
DOI：
10.1021/nl204322r
复制
发表时间：
2012-01
期刊：
影响因子：
10.8
通讯作者：
I. Swart;Tobias Sonnleitner;Judith Niedenführ;J. Repp
中科院分区：
文献类型：
--
作者：
I. Swart;Tobias Sonnleitner;Judith Niedenführ;J. Repp
在金属和半导体表面上，可以使用原子力显微镜/扫描隧道显微镜的尖端以原子尺度的精度构建功能性纳米结构。相比之下，绝缘体上的受控侧向操作尚未报道。传统的基于推拉的操纵方法不能用于吸附在绝缘膜上的分子，因为扩散势垒和脱附能量之间的不利比例。在这里，我们证明了吸附在绝缘膜上的分子可以通过在分子中定义明确的位置注入非弹性隧穿电子来以受控的方式进行横向操纵。该技术已成功应用于几种不同的分子。
On metallic and semiconductor surfaces functional nanostructures can be built with atomic scale precision using the tip of an atomic force microscope/scanning tunneling microscope. In contrast, controlled lateral manipulation on insulators has not been reported. The traditional pushing and pulling based manipulation methods cannot be used for molecules adsorbed on insulating films because of the unfavorable ratio between diffusion barrier and desorption energy. Here, we demonstrate that molecules adsorbed on insulating films can be laterally manipulated in a controlled way by injecting inelastically tunneling electrons at well-defined positions in a molecule. The technique was successfully applied to several different molecules.