Effect of temperature on SiC whiskers growth of SiCw/SiC composites based on selective laser sintering and their mechanical properties
Effect of temperature on SiC whiskers growth of SiCw/SiC composites based on selective laser sintering and their mechanical properties
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DOI：
10.1016/j.jallcom.2022.168624
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发表时间：
2022
影响因子：
6.2
通讯作者：
Tao Zeng
中科院分区：
文献类型：
--
作者：
Decai Lu;Su Cheng;Laizhen Jin;Liwei Zhang;Dequan Shi;Hongyan Yue;Tao Zeng
The SiCW/SiC composites was prepared based on selective laser sintering (SLS) technology, and the effect of .sintering temperature on the growing number of SiCW/SiC whiskers was studied. According to the classical .diffusion theory, the growth process of SiC whiskers at each stage was analyzed, and the relationship model .between the number of whiskers and temperature was built. The growth rate of in-situ SiC whiskers was .decided by V-L (Vapor-Liquid) and L-S (Liquid-Solid) stages. It is decided by L-S at 1322 ℃−1438 ℃, V-L at .1438 ℃−1458 ℃, and L-S at 1458 ℃−1600 ℃. This is mainly due to different rates of SiO and CO gases .generated by PCS at different temperatures. By coupling with the model of porosity and the number of .whiskers, a model between the number of SiC whiskers growth in the SiCW/SiC composite materials and .temperature-porosity was obtained, and this model has a high accuracy of more than 93%. The mechanical .properties of the samples with similar volume density treated by the PIP process showed that the fracture .toughness of the unit volume density was increased by 4.64%, 112.01%, and 121.37% for samples A-1, A-2, .and A-3, respectively, which indicates that the SiC whiskers grow the fracture toughness and has excellent .toughening effect. The model is applicable for in-situ SiC whisker microstructure based on SLS, and also for .other 3D printing in-situ whisker toughening systems.
