Spintronic devices: From memory to memristor
Spintronic devices: From memory to memristor
复制标题
DOI：
10.1109/icccas.2010.5581868
复制
发表时间：
2010-07
期刊：
影响因子：
--
通讯作者：
Yiran Chen;H. Li;Xiaobin Wang
中科院分区：
文献类型：
--
作者：
Yiran Chen;H. Li;Xiaobin Wang
1971年，加州大学伯克利分校的Leon Chua教授基于电路理论的概念完整性，预言了第四种基本无源电路元件——忆阻器。 37 年后，Stanley Williams 博士领导的惠普实验室团队宣布开发出第一个开关忆阻器。此后，越来越多的忆阻器研究在各个层面上展开。近十年来，自旋电子技术被引入非易失性存储器设计领域。例如，自旋转移矩随机存取存储器（STT-RAM）已表现出许多有前途的特性，如非易失性、零待机功耗、纳秒级存取时间、高存储密度和良好的可扩展性。在本文中，我们将从器件、设计和系统应用的角度简要介绍我们在 STT-RAM 中的工作。除此之外，我们还将讨论一类基于自旋电子技术的忆阻器（自旋电子忆阻器），包括器件建模和在传感器中的应用。
In 1971, Professor Leon Chua in UC Berkeley predicted the fourth fundamental passive circuit element - memristor, based on the conceptual completeness of circuit theory. 37 years later, a team at HP Labs led by Dr. Stanley Williams announced the development of the first switching memristor. From then, more and more researches on memristor are conducted at various levels. Spintronic technology was introduced to the nonvolatile memory design regime in the recent decade. For example, spin-transfer torque random access memory (STT-RAM) has demonstrated many promising characteristics such as non-volatility, zero standby power, nanosecond access time, high memory density, and good scalability. In this paper, we will give a short tutorial of our works in STT-RAM from the viewpoints of device, design and system applications. On the top of that, we will also discuss one type of memsitors based on spintronic technology (spintronic memristor), including the device modeling and the applications in sensor.