Stress relaxation in CuNi thin films
Stress relaxation in CuNi thin films
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DOI：
10.1063/1.369721
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发表时间：
1999-04-01
影响因子：
3.2
通讯作者：
Weihnacht, V
中科院分区：
文献类型：
--
作者：
Brückner, W;Weihnacht, V
研究了溅射和退火薄膜在不同温度下的应力松弛Cu0.57Ni0.42Mn0.01通过热循环至550 ℃稳定的膜的微结构显示出膜厚度尺寸的孪晶晶粒。在200 ℃以下，观察到小的低温高应力塑性，可能是由于障碍物控制的位错滑移。在300至550摄氏度之间，检测到明显的可塑性。这可以通过两个松弛过程来描述，其中应力朝着最终值呈指数下降。两个过程的激活能一致（0.4 eV/原子），变形率相差10倍。我们假设：（i）较慢的过程是由于薄膜附着在衬底上而受到晶界扩散限制的流动，（ii）较快的过程是在晶界处具有扩散调节的机械孪生。(C)1999年美国物理学会。[S0021-8979（99）06107-1]。
Stress relaxation in sputtered and annealed Cu0.57Ni0.42Mn0.01 thin films has been studied at various temperatures. The microstructure of the films stabilized by a thermal cycle to 550 degrees C showed twinned grains of the dimension of the film thickness. Below 200 degrees C, a small low-temperature high-stress plasticity was observed, probably due to obstacle-controlled dislocation glide. Between 300 and 550 degrees C distinct plasticity was detected. This can be described by two relaxation processes with exponentially decreasing stress towards a final value. The activation energies for the two processes agree (0.4 eV/atom), the deformation rates differ by a factor of 10. We suppose that (i) the slower process is flow by grain-boundary diffusion limited as a result of the attachment of the film onto the substrate and (ii) the faster process is mechanical twinning with diffusional accommodation at the grain boundaries. (C) 1999 American Institute of Physics. [S0021-8979(99)06107-1].