Transport properties of ZrNiSn-based intermetallics
Transport properties of ZrNiSn-based intermetallics
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ZrNiSn基金属间化合物的输运特性
DOI：
10.1109/ict.1997.667191
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
D. Morelli
中科院分区：
文献类型：
--
作者：
C. Uher;Siqing Hu;Jihui Yang;G. Meisner;D. Morelli
MNiSn形式的金属间化合物，其中M是钛、锆或铪，是带隙在0.2电子伏特量级的半导体。由于其大的导带质量，它们显示出作为具有高品质因数的热电材料的前景。为了评估这种潜力，我们研究了纯的和掺杂的ZrNiSn和Zr/sub 0.5/Hf/sub 0.5/NiSn混晶的热电性能。在用Sb掺杂时，电阻率可以降低20-40倍，塞贝克系数仅降低2倍。掺杂样品在室温下得到的功率因数与现有技术的热电材料的功率因数相当。Zr/sub 0.5/Hf/sub 0.5/NiSn的热导率相对于ZrNiSn强烈降低，但必须进一步降低以获得大的品质因数。这些材料的输运性质对退火条件非常敏感。
Intermetallic compounds of the form MNiSn, where M is titanium, zirconium, or hafnium, are semiconductors with band gaps on the order of 0.2 electron volts. Due to their large conduction band masses, they show promise as thermoelectric materials with high figure of merit. In order to assess this potential, we have studied the thermoelectric properties of pure and doped ZrNiSn and Zr/sub 0.5/Hf/sub 0.5/NiSn mixed crystals. Upon doping with Sb the resistivity can be reduced by a factor of 20-40 with a reduction in the Seebeck coefficient of only a factor of two. The resulting power factors of doped samples at room temperature are comparable to those of state of the art thermoelectric materials. The thermal conductivity of Zr/sub 0.5/Hf/sub 0.5/NiSn is reduced strongly relative to ZrNiSn but must be reduced further to obtain a large figure of merit. The transport properties of these materials are very sensitive to annealing conditions.