Layer-number determination in graphene by out-of-plane phonons
Layer-number determination in graphene by out-of-plane phonons
复制标题
DOI：
10.1103/physrevb.85.235447
复制
发表时间：
2012-06-25
影响因子：
3.7
通讯作者：
Maultzsch, Janina
中科院分区：
文献类型：
--
作者：
Herziger, Felix;May, Patrick;Maultzsch, Janina
我们提出并讨论了一个双共振拉曼模式，在少层石墨烯，是能够探测石墨烯层的数量。在G模式的低频侧上的这种所谓的N模式由组合纵向光学（LO）和面外（ZO '）声子的双共振斯托克斯-反斯托克斯过程产生。对双层石墨烯双共振拉曼光谱的模拟与实验结果非常一致。
We present and discuss a double-resonant Raman mode in few-layer graphene that is able to probe the number of graphene layers. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes-anti-Stokes process combining an longitudinal optical (LO) and an out-of-plane (ZO') phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments.