Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
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使用氧化 n 型和 p 型硅提高硅探测器的辐射硬度特性
DOI：
10.1109/radecs.1999.858558
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Hanlon
中科院分区：
文献类型：
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作者：
G. Casse;P. Allport;M. Hanlon
用不同硅材料制成的焊盘二极管研究了24 GeV/c质子辐照对硅探测器电学性能的影响。已经使用了标准的高级p型和n型衬底以及氧化的n型衬底。研究了二极管的反向电流（I/sub r/）和全耗尽电压（V/sub fd/）作为注量的函数。来自不同供应商的具有各种起始材料和技术的充氧器械与未充氧基质器械相比，均显示出V/sub fd/和CCE降解速率的一致改善。n型探测器的辐射损伤引入了稳定的缺陷，作为有效的p型掺杂，并导致在几个10/sup 13/ cm/sup-2/的中子当量注量下硅体的导电类型的变化（类型反转）。反转后的二极管结从原来的一侧迁移到探测器的背面。使用具有p型衬底的硅探测器避免了结的迁移。此外，使用n侧读出允许在欠耗尽模式下操作的分段器件中更好地收集电荷。在p型衬底上制作的大面积（/spl ap/6.4/spl times/6.4cm/sup 2/）80 /spl μ/m间距的微带电容耦合探测器，采用n-i-p二极管结构，其多晶硅偏置电阻已被辐照到3/spl middot/10/sup 14/ cm/sup-2/。我们目前的结果表明，在欧洲核子研究中心的大型强子对撞机（LHC）使用这种设备的可行性照射前后。
The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un-oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detectors with p-type substrate. Furthermore, the use of n-side readout allows a better charge collection in segmented devices operated in underdepleted mode. Large area (/spl ap/6.4/spl times/6.4 cm/sup 2/) 80 /spl mu/m pitch microstrip capacitively coupled detectors with polysilicon bias resistors made on p-type substrate with a n-i-p diode structure have been irradiated up to 3/spl middot/10/sup 14/ cm/sup -2/. We present results both before and after irradiation demonstrating the feasibility of using such devices at the Large Hadron Collider (LHC) at CERN.