CuO thin films for the detection of H2S doses: Investigation and application
CuO thin films for the detection of H2S doses: Investigation and application
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DOI：
10.1002/pssa.201431735
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发表时间：
2015-06-01
影响因子：
2
通讯作者：
Wagner, Thorsten
中科院分区：
文献类型：
--
作者：
Hennemann, Joerg;Kohl, Claus-Dieter;Wagner, Thorsten
我们提出了一个新的概念，用于检测硫化氢（H2S）剂量的半导体（p型）氧化铜（II）（CuO）薄膜的渗滤效应的基础上。在180摄氏度的H2S暴露下，CuO发生化学反应，形成金属导电的硫化铜（II）（CuS）。当H_2S浓度×暴露时间达到一定剂量时，电导迅速增加两个数量级，这归因于CuS渗流通道的形成。本研究的重点是这种效果的再现性，以及假设的基本渗流机制的理论建模。电导数据的分析揭示了一个行为，这是定性非常相似的标准标度理论，但具有较低的电导指数μ近似为0.85（而不是1.3的二维系统）。这种偏差可以用叠加扩散过程和实验系统与标准渗滤系统的偏差来解释。然而，CuO薄膜表现出固有的结构控制阈值的H2S剂量，这允许利用作为H2S剂量计。CuO薄膜在180 ℃下暴露于20ppm H2S的电导行为。在测量开始后1054s达到逾渗阈值p（c）。
We present a new concept for the detection of hydrogen sulfide (H2S) doses based on percolation effects in semiconducting (p-type) copper (II) oxide (CuO) thin films. Under H2S exposure at 180 degrees C CuO undergoes a chemical reaction to metallic conducting copper (II) sulfide (CuS). Reaching a certain dose of H2S (concentrationxexposure time) the conductance increases rapidly by two orders of magnitude which is attributed to the formation of CuS percolation paths. This study focuses on the reproducibility of this effect as well as on theoretical modeling of the assumed underlying percolation mechanism. Analysis of conductance data reveals a behavior that is qualitatively very similar to standard scaling theory, but with a lower conductance exponent of mu approximate to 0.85 (instead of 1.3 for 2D systems). The deviation can be explained by a superimposing diffusion process and by deviations of the experimental systems from standard percolation systems. Nevertheless, the CuO thin films exhibit intrinsic structure controlled thresholds for H2S doses, which allows the utilization as H2S dosimeter. Conductance behavior of a CuO thin film exposed to 20ppm H2S at 180 degrees C. The percolation threshold p(c) is reached 1054s after start of the measurement.