High-Performance Enhancement-Mode p -Channel GaN MISFETs With Steep Subthreshold Swing
High-Performance Enhancement-Mode p -Channel GaN MISFETs With Steep Subthreshold Swing
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具有陡峭亚阈值摆幅的高性能增强型 p 沟道 GaN MISFET
DOI：
10.1109/led.2022.3152308
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发表时间：
2022
影响因子：
4.9
通讯作者：
Yin Y
中科院分区：
文献类型：
--
作者：
Yin Y
本文报道了一种具有金属-绝缘体-半导体栅结构的增强型沟道GaN异质结场效应晶体管。通过低功率等离子体栅凹进刻蚀和栅介质沉积预处理，首次在非故意掺杂GaN中间层的E型GaN沟道晶体管中实现了60 mV/dec的亚阈值摆幅。制作的沟道晶体管具有优异的E模式性能，阈值电压为-1.53 V，有效导通电阻为1.0.mm，峰值导通电阻为1.0 mS/mm，highratio > 107。双向栅极扫描测量的p沟道器件的阈值电压漂移为0.12 V和增加的亚阈值摆幅为107 mV/dec。此外，在沟道GaN晶体管的双沟道导电机制，并讨论。
We report an enhancement-mode (E-mode)-channel GaN heterojunction field-effect transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold swing is experimentally achieved in the E-mode GaN-channel transistors on an unintentionally doped GaN interlayer for the first time by using a low-power plasma gate recessing etch and gate dielectric deposition pre-treatment. The fabricated-channel transistors exhibit excellent E-mode performance with a threshold voltage of −1.53 V, an effective on-resistance of 1.0.mm, a peak transconductance of 1.0 mS/mm, and a highratio > 107. Bi-directional gate sweep measurements on the p-channel devices show a threshold voltage shift of 0.12 V and an increased subthreshold swing of 107 mV/dec. In addition, the dual-channel conduction mechanism in the-channel GaN transistors is presented and discussed.