Electron transport in nano-scaled piezoelectronic devices
Electron transport in nano-scaled piezoelectronic devices
复制标题
纳米级压电器件中的电子传输
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
G. Martyna
中科院分区：
文献类型：
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作者：
Zhengping Jiang;M. Kuroda;Yaohua Tan;D. Newns;M. Povolotskyi;T. Boykin;T. Kubis;Gerhard Klimeck;G. Martyna
压电三极管(PET)是一种用于快速、低功率开关的后CMOS器件。在该装置中，通过扩展弛豫压电元件使压阻通道金属化，从而开启该装置。混价化合物SmSe具有等结构压力诱导的连续金属绝缘体转变，在大块单晶中具有很好的特性，是一种很好的PET通道材料。预测和优化基于SmSe的现实的纳米级PET的性能需要了解量子限制、隧道效应和金属界面的影响。在这项工作中，我们建立了一个计算高效的经验紧束缚(ETB)模型，用于研究SmSe在这些体系中的量子输运和PET通道长度的标度极限。ETB成功地捕捉到了SmSe带隙在压力下的调制，弹道电导在静压应变下出现了数量级的变化，支持了SmSe材料的可操作性。
The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via the expansion of a relaxor piezoelectric element to turn the device on. The mixed-valence compound SmSe is a good choice of PET channel material because of its isostructural pressure-induced continuous metal insulator transition, which is well characterized in bulk single crystals. Prediction and optimization of the performance of a realistic, nano-scaled PET based on SmSe requires the understanding of quantum confinement, tunneling, and the effect of metal interface. In this work, a computationally efficient empirical tight binding (ETB) model is developed for SmSe to study quantum transport in these systems and the scaling limit of PET channel lengths. Modulation of the SmSe band gap under pressure is successfully captured by ETB, and ballistic conductance shows orders of magnitude change under hydrostatic strain, supporting operability o...