Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition
Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition
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DOI：
10.1016/j.tsf.2006.01.051
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发表时间：
2006-08-14
期刊：
影响因子：
2.1
通讯作者：
Ebihara, Kenji
中科院分区：
文献类型：
--
作者：
Park, Sang-Moo;Ikegami, Tomoaki;Ebihara, Kenji
采用脉冲激光沉积法在石英玻璃衬底上制备了高质量的透明导电掺镓氧化锌（GZO）薄膜。主要研究了GZO薄膜的结构、电学和光学性质。在X射线衍射中，检测到（002）和（004）峰，表明Ga掺杂没有引起纤锌矿ZnO的结构退化。用X射线光电子能谱研究了GZO薄膜的化学状态。在300 ℃的衬底温度下形成的GZO膜显示出8.12 × 10（-5）Ω cm的低电阻率、1.46 × 10（22）cm（-3）的载流子浓度和在0.67 Pa的氧压下30.96 cm（2）/Vs的载流子迁移率。获得大于90%的可见光透射率。(c)2006 Elsevier B. V.保留所有权利。
High-quality transparent conductive gallium-doped ZnO (GZO) thin films were deposited on quartz glass substrates using pulsed laser deposition. The structure and electrical and optical properties of the as-grown GZO films were mainly investigated. in X-ray diffraction, (002) and (004) peaks were detected, indicating that Ga doping did not cause structural degradation of wurtzite ZnO. The chemical state of GZO films was investigated by X-ray photoelectron spectroscopy. The GZO films formed at a substrate temperature of 300 degrees C showed a low electrical resistivity of 8.12 x 10(-5) Omega cm, a carrier concentration of 1.46 x 10(22) cm(-3) and a carrier mobility of 30.96 cm(2)/Vs at an oxygen pressure of 0.67 Pa. A visible transmittance of above 90% was obtained. (c) 2006 Elsevier B.V. All rights reserved.