Characterization of surface morphology of copper tungsten thin film by surface fractal geometry and resistivity

Characterization of surface morphology of copper tungsten thin film by surface fractal geometry and resistivity
复制标题

DOI:
10.1016/j.tsf.2004.05.132
复制
发表时间:
2004-12-01
期刊:
影响因子:
2.1
通讯作者:
Xu, KW
Xu, KW
中科院分区:
材料科学3区
文献类型:
--
作者:
Wang, Y;Xu, KW

文献摘要

被引文献

相似文献

Thin films of copper-tungsten (Cu-W) deposited on silicon wafers by magnetron sputtering were characterized by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) and four-point probe method were employed to characterize the microstructure and properties of Cu-W films. Power spectra density (PSD) was used to calculate the fractal dimension of AFM images. The results show that the fractal dimension values increase with the film thickness. A positive correlation between fractal dimension and resistivity of the film was also demonstrated for amorphous films. Changes in the relationship between the resistivity and the fractal dimension are observed for films with possible crystalline structures. (C) 2004 Elsevier B.V. All rights reserved.