Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors
Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors
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DOI：
10.1109/led.2017.2720480
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发表时间：
2017-06
影响因子：
4.9
通讯作者：
Weijie Wang;Shahab Shervin;S. Oh;Jie Chen;Yang Huai;S. Pouladi;Hyunsoo Kim;Sungnam Lee;J. Ryou
中科院分区：
文献类型：
--
作者：
Weijie Wang;Shahab Shervin;S. Oh;Jie Chen;Yang Huai;S. Pouladi;Hyunsoo Kim;Sungnam Lee;J. Ryou
本文利用数值模拟方法研究了基于柔性AlGaInN/GaN异质结构的高空穴迁移率晶体管（hmts）的潜力和可行性。我们绘制了二维空穴气体（2DHG）在AlN、GaN和AlGaInN的不同摩尔分数和机械弯曲条件下的薄片密度图。通过弯曲产生的外部压缩应变可以诱导相对较高的2DHG密度（例如$ > 8\ × 10^{12}$ cm $^{-2}$），同时保持较低的InN分数（${I}-{V}$）特性，以及不同弯曲条件下In0.25 Al0.75N/GaN异质结构的转移特性。通过向上弯曲，形成2DHG来执行htts的器件功能。在不弯曲的情况下，产生二维电子气体，器件具有高电子迁移率晶体管的功能。这种独特的特性可用于高功率和高温应用的互补集成电路。
We study the potential and feasibility of high hole mobility transistors (HHMTs) based on flexible AlGaInN/GaN heterostructures using numerical simulation. We develop a map for the sheet density of two-dimensional hole gas (2DHG) at different mole fractions of AlN, GaN, and InN of AlGaInN with mechanical bending conditions. External compressive strain via bending can induce relatively high density of 2DHG (e.g., $ > 8\times 10^{12}$ cm $^{-2}$ ) while keeping InN fraction low ( ${I}-{V}$ characteristics, and transfer characteristics of an In0.25 Al0.75N/GaN heterostructure in different bending conditions. By bending up, 2DHG is formed to perform the device function as HHMTs. Without bending, 2-D electron gas is induced and the devices function as high electron mobility transistors. This unique property can be used in complementary integrated circuits for high-power and high-temperature applications.