Photoluminescence and multiphonon resonant Raman scattering in low-temperature grown ZnO nanostructures
Photoluminescence and multiphonon resonant Raman scattering in low-temperature grown ZnO nanostructures
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DOI：
10.1063/1.2336997
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发表时间：
2006-08-14
影响因子：
4
通讯作者：
Hua, Younan
中科院分区：
文献类型：
--
作者：
Kumar, Bhupendra;Gong, Hao;Hua, Younan
报道了200℃射频磁控溅射生长的纳米氧化锌的光学性质。用横截面透射电子显微镜证实了薄膜的纳米晶性质。在这些薄膜中，平均尺寸约为3-5 nm的氧化锌纳米晶镶嵌在无定形的基质中。这种纳米结构薄膜的光致发光光谱显示其近带边发射约为3.3 eV。在这种纳米结构中，观察到氧化锌的一阶纵光声子红移约8-11厘米(-1)，与体相氧化锌的纵光声子峰相比，红移约8-11厘米(-1)。77K的紫外共振拉曼激发显示了高达8级的多声子LO模。(C)2006年美国物理研究所。
The authors report on the optical properties of nanocrystalline ZnO grown at 200 degrees C by radio-frequency magnetron sputtering. The nanocrystalline nature of the films was confirmed by cross-sectional transmission electron microscopy. In these films, ZnO nanocrystals with an average size of about 3-5 nm were embedded in an amorphous matrix. The photoluminescence spectra from such nanostructured thin films show the near-band-edge emissions around 3.3 eV. A redshift of about 8-11 cm(-1) is observed in the case of first-order longitudinal-optical (LO) phonon of ZnO in such nanostructures when compared to the LO phonon peak of bulk ZnO. The ultraviolet resonant Raman excitation at 77 K shows multiphonon LO modes up to eighth order. (c) 2006 American Institute of Physics.