Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes
Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes
复制标题
近乎理想的 ZnO 肖特基二极管的温度相关特性
DOI：
10.1109/ted.2009.2026393
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发表时间：
2009
影响因子：
3.1
通讯作者：
S. M. Durbin
中科院分区：
文献类型：
--
作者：
M. Allen;X. Weng;J. Redwing;K. Sarpatwari;S. Mohney;H. von Wenckstern;M. Grundmann;S. M. Durbin
在40-423 K温度范围内，研究了低理想因子（300 K时为1.09）ZnO肖特基二极管的伏安特性。在低载流子浓度（n = 1 × 1014 cm-3）的水热生长的块状ZnO单晶晶片的Zn极性面上制造平面几何器件。在293和423 K之间的电流传输主要由电子发射，提供的ZnO表面暴露于空气中。二极管的接近理想的特性产生了10 plusmn 6 Amiddotcm-2 middotK-2的实验Richardson常数，接近于32 Amiddotcm-2 middotK-2的理论值，并且比以前报道的值大两个数量级。
The current-voltage characteristics of low-ideality factor (1.09 at 300 K) ZnO Schottky diodes were investigated over the temperature range of 40-423 K. Planar geometry devices were fabricated on the Zn-polar face of a low carrier concentration (n = 1 times 1014 cm-3) hydrothermally grown bulk ZnO single crystal wafer. The current transport was dominated by thermionic emission between 293 and 423 K, provided the ZnO surface was exposed to air. The nearly ideal characteristics of the diodes yielded an experimental Richardson constant of 10 plusmn 6 Amiddotcm-2middotK-2, close to the theoretical value of 32 Amiddotcm-2middotK-2, and two orders of magnitude larger than previously reported values.