Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
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DOI：
10.1039/c9ce01926j
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发表时间：
2020-02
期刊：
影响因子：
3.1
通讯作者：
C. Blumberg;L. Liborius;J. Ackermann;F. Tegude;A. Poloczek;W. Prost;N. Weimann
中科院分区：
文献类型：
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作者：
C. Blumberg;L. Liborius;J. Ackermann;F. Tegude;A. Poloczek;W. Prost;N. Weimann
我们提出了在n-GaN层上生长Au催化的p-GaAs纳米线，作为一种通过金属有机气相外延在氮化化合物半导体上生长砷化物的可能方法。气-液-固结合生长和选择性面积外延控制了GaAs的生长位置、纳米线密度和纳米线的生长方向。因此，一个空间控制的纳米线生长达到，这是强制性的器件制造。生长位置是通过在n-GaN上平版定位金盘来确定的。通过调整生长条件（qtba、压力），优化了纳米线密度。横向和垂直各向异性纳米线生长是通过结构SiOx开口的VLS生长实现的。成功控制生长方向的关键技术参数是Au催化剂相对于SiOx掩膜的位置，共晶尺寸相对于开口尺寸，以及SiOx厚度。这些结果导致了不同的pn结位置和可调节的纳米线生长尺寸和方向。
We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire density and the nanowire growth direction are controlled by a combination of vapor–liquid–solid growth and selective area epitaxy. Thus, a spatially controlled nanowire growth is attained, which is mandatory for device fabrication. The growth position is defined by lithographically positioned Au discs on n-GaN. By adapting the growth conditions (QTBAs, presaturation) the nanowire density is optimized. Lateral and vertical anisotropic nanowire growth is attained through VLS growth in structured SiOx openings. Critical technological parameters for successful control of the growth direction are the positioning of the Au catalyst in relation to the SiOx mask, the size of the eutectic in relation to the opening dimensions, and the SiOx thickness. These results lead to distinct pn-junction positions and adjustable nanowire growth dimensions and directions.