Facile approach to prepare a quasi-one-dimensional anisotropic wetting surface on copper substrate and its wetting properties
Facile approach to prepare a quasi-one-dimensional anisotropic wetting surface on copper substrate and its wetting properties
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铜基板上准一维各向异性润湿表面的简便制备方法及其润湿性能
DOI：
10.1039/c5ra08409a
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发表时间：
2015-07
期刊：
影响因子：
3.9
通讯作者：
Guoqu Zheng
中科院分区：
文献类型：
--
作者：
Xin Xu;Guangya Hou;Huazhen Cao;Guoqu Zheng
报道了一种在铜基底上制备新型准一维各向异性润湿表面的方法。采用压印和电铸技术将不锈钢斜纹荷兰编织网（SSDM）的Q-1-D微脊结构复制到铜膜表面，然后用肉豆蔻酸对铜膜进行改性，在Q-1-D微脊上形成大量纳米团簇。铜基板，具有微观有序脊/纳米无序簇的Q-1-D分级结构，表现出独特的各向异性润湿性。研究了改性时间对润湿性和防污性能的影响。结果表明，改性时间通过改变表面形貌对润湿性有很大影响。改性132 h后，其平行和垂直方向的静态接触角分别为150.9°和147.9°。该研究为在铜基底上制备各向异性润湿表面提供了一种新的方法，该各向异性润湿表面在传热、微流控和防污等领域具有潜在的应用前景。
In this paper, a facile method was reported to prepare a novel quasi-one-dimensional (Q-1-D) anisotropic wetting surface on copper substrate. The Q-1-D microridged structure of a stainless steel twilled Dutch weave mesh (SSDM) was replicated onto the surface of the copper film by impression and electroforming techniques, and then the copper film was modified by myristic acid to form numerous nanoclusters on the Q-1-D microridges. The copper substrate, having the Q-1-D hierarchical structure of micro-ordered ridges/nano-disordered clusters, exhibited distinctive anisotropic wettability. The effects of modification time on wettability and anti-fouling properties were studied. The results showed that modification time affected the wetting properties greatly by changing the topography. After being modified for 132 h, the static contact angles (SCAs) in parallel and vertical directions were 150.9° and 147.9°, respectively. This study proposed a new approach for the fabrication of an anisotropic wetting surface on copper substrate, and the anisotropic wetting surface may have potential applications in heat transfer, microfluidic and anti-fouling devices.
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影响因子：
11.9
作者：
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DOI：
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发表时间：
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期刊：
Langmuir : the ACS journal of surfaces and colloids
影响因子：
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影响因子：
10.8
作者：
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影响因子：
5.4
作者：
Chen, Shougang;Chen, Yan;Yin, Yansheng
通讯作者：
Yin, Yansheng
影响因子：
5.4
作者：
Fresnais, J;Chapel, JP;Poncin-Epaillard, F
通讯作者：
Poncin-Epaillard, F