Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure
Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure
复制标题
使用静水压力确定长波长量子阱半导体激光器中俄歇复合的波长依赖性
DOI：
10.1109/3.622637
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发表时间：
1997
影响因子：
2.5
通讯作者：
A. Adams
中科院分区：
文献类型：
--
作者：
M. Silver;E. O’Reilly;A. Adams
本文测量了无应变1.48 μ/m InGaAsP量子阱激光器阈值电流随流体静压的变化。我们结合联合收割机这一结果与理论计算提取的带隙依赖的俄歇系数，C，在200毫电子伏的范围内。我们发现，在这个范围内，C大约减少三分之一。我们已经计算出的主要俄歇过程的带隙依赖性，并得出结论，在此波长范围内占主导地位的俄歇过程可以是声子辅助CHCC过程或带到带CHSH过程。基于这一结果，我们估计了应变和无应变激光器的阈值电流密度，波长范围从1.75到1.3 /spl μ/m，使用这两种工艺。在这两种情况下，我们得到了很好的理论和实验之间的一致性，并表明俄歇复合是占主导地位的电流贡献在1.5-和1.3-/SPL μ/m的设备。
The variation of the threshold current of an unstrained 1.48-/spl mu/m InGaAsP quantum-well (QW) laser has been measured as a function of hydrostatic pressure up to 27 kbar. We combine this result with theoretical calculations to extract the bandgap dependence of the Auger coefficient, C, over a range of 200 meV. We find that over this range C reduces by a factor of about three. We have calculated the bandgap dependence of the main Auger processes and conclude that the dominant Auger process over this wavelength range could either be the phonon-assisted CHCC process or the band-to-band CHSH process. Based on this result, we have estimated the threshold current density of strained and unstrained lasers with wavelengths ranging from 1.75 to 1.3 /spl mu/m using both these processes. We get good agreement between theory and experiment in both cases and show that Auger recombination is the dominant current contribution in 1.5- and 1.3-/spl mu/m devices.