Generation and evolution of residual stresses in physical vapour-deposited thin films
Generation and evolution of residual stresses in physical vapour-deposited thin films
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DOI：
10.1016/s0042-207x(00)00475-9
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发表时间：
2001-05-14
期刊：
影响因子：
4
通讯作者：
Pauleau, Y
中科院分区：
文献类型：
--
作者：
Pauleau, Y
由物理气相沉积（PVD）技术产生的薄膜中的残余应力是由热应力、本征应力和外部应力的贡献引起的。拉伸内应力通常在由非高能粒子通过热蒸发沉积的不完全致密的膜中观察到。在高能粒子轰击下，在低温下沉积的相对致密的薄膜中产生压缩内应力。提出了各种模型在文献中解释PVD膜的内应力的起源。除了热应力和内应力外，在暴露于室内空气或极性分子蒸气的多孔膜中还可发现外应力。给出并讨论了磁控溅射和热蒸发沉积薄膜的应力数据。(C)2001爱思唯尔科技有限公司版权所有。
Residual stresses in films produced by physical vapour deposition (PVD) techniques result from the contribution of thermal, intrinsic and extrinsic stresses. Tensile intrinsic stresses are usually observed in not fully dense films deposited by thermal evaporation from non-energetic particles. Compressive intrinsic stresses develop in relatively dense films deposited at low temperatures under energetic particle bombardment. Various models proposed in the literature to explain the origin of intrinsic stresses in PVD films are presented. In addition to thermal and intrinsic stresses, extrinsic stresses may be found in porous films exposed to room air or polar molecule vapour. Stress data for films deposited by magnetron sputtering and thermal evaporation are presented and discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.