EFFECTS OF MONOLAYER COVERAGE, FLUX RATIO, AND GROWTH RATE ON THE ISLAND DENSITY OF INAS ISLANDS ON GAAS
EFFECTS OF MONOLAYER COVERAGE, FLUX RATIO, AND GROWTH RATE ON THE ISLAND DENSITY OF INAS ISLANDS ON GAAS
复制标题
单层覆盖度、通量比和生长率对 GAAS 上 INAS 岛密度的影响
DOI：
10.1063/1.113709
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发表时间：
1995
影响因子：
4
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
G. Solomon;J. Trezza;J. Harris
我们研究了单层覆盖率、V/III通量比和生长速率对分子束外延在GaAs上生长的三维诱导InAs孤立岛密度的影响。在孤立的岛屿生长制度，增加单层覆盖率增加的InAs岛的密度，只有一个小的岛的大小增加。降低V/III通量比或降低生长速率会增加岛密度，而不会改变平均面内岛直径。我们已经观察到岛屿密度是理想的紧密堆积岛屿密度的80%。我们提出了一个模型，解释与单层覆盖的岛密度增加，在润湿层中的累积应变的局部变化的点，在该点开始局部孤岛。随着更多的材料被沉积，更多的岛形核并且岛密度增加。岛密度的增加，降低V/III通量比或增长率，通过增加吸附原子的表面扩散在下面的润湿…
We have studied the effects of monolayer coverage, V/III flux ratio and growth rate on the density of three‐dimensional growth induced isolated InAs islands grown on GaAs by molecular‐beam epitaxy. Within the isolated island growth regime, increasing the monolayer coverage increases the InAs island density with only a small increase in island size. Decreasing the V/III flux ratio or decreasing the growth rate increases the island density without changing the average in‐plane island diameter. We have observed island densities that are 80% of the ideal close‐packed island density. We propose a model explaining the island density increase with monolayer coverage; local variations in accumulated strain in the wetting layer vary the point at which local islanding is initiated. As more material is deposited more islands are nucleated and the island density increases. The island density increases with decreasing V/III flux ratio or growth rate by increasing the adatom surface diffusion in the underlying wetting ...