Wafer-Level Epitaxial Silicon Packaging for Out-of-Plane RF MEMS Resonators With Integrated Actuation Electrodes
Wafer-Level Epitaxial Silicon Packaging for Out-of-Plane RF MEMS Resonators With Integrated Actuation Electrodes
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DOI：
10.1109/tcpmt.2010.2100711
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发表时间：
2011-03
期刊：
影响因子：
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通讯作者：
Kuan-Lin Chen;Shasha Wang;J. Salvia;R. Melamud;R. Howe;T. Kenny
中科院分区：
文献类型：
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作者：
Kuan-Lin Chen;Shasha Wang;J. Salvia;R. Melamud;R. Howe;T. Kenny
本文提出了一种用于面外射频微机电系统谐振器的圆片级封装和静电驱动的集成解决方案。通过将电极集成到外延生长的硅层中，可以在一个工艺步骤中构建封装和面外致动，这导致超紧凑和鲁棒的封装。首先，描述面外电极的设计和制造工艺。的电极的机械和电气性能进行了讨论，建模，并表征。利用这种封装方法制作了200 kHz扭转模梁谐振器和11.2 MHz横模差分方板谐振器，并对它们的性能进行了讨论。
This paper presents an integrated solution for wafer-level packaging and electrostatic actuation of out-of-plane radio frequency microelectromechanical system resonators. By integrating the electrodes into the epitaxial-grown silicon layer, both the encapsulation and the out-of-plane actuation can be built in one process step, which results in an ultracompact and robust packaging. First, designs and fabrication processes of the out-of-plane electrode are described. The mechanical and electrical properties of the electrode are discussed, modeled, and characterized. A 200 kHz torsional mode beam resonator and an 11.2 MHz transverse-mode differential square plate resonator are fabricated using this packaging method and their performances are presented and discussed.