Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides
Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides
复制标题
二维半导体过渡金属二硫化物谷载流子动力学超快光谱研究综述
DOI：
10.1088/1674-1056/26/3/037801
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发表时间：
2017
影响因子：
1.7
通讯作者：
Jing Liu
中科院分区：
文献类型：
--
作者：
Dong Sun;Jiawei Lai;Junchao Ma;Qinsheng Wang;Jing Liu
二维层状过渡金属二硫属化合物为未来基于谷的信息处理提供了新的机会，也为研究激子效应提供了一个理想的平台。在各种器件物理学的中心，对他们可能的电子和光电应用是了解各种多粒子电子态的动态演化，特别是激子占主导地位的TMD的光电响应，在新的背景下的自由度的谷。在这里，我们提供了一个简短的回顾，在使用螺旋分辨超快光谱，特别是超快泵浦-探测光谱，研究半导体单层过渡金属二硫属化物谷相关的多粒子电子态的动态演化的实验进展。
The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based information processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many-particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump–probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides.