Irradiation of Transition Metal Dichalcogenides Using a Focused Ion Beam: Controlled Single‐Atom Defect Creation
Irradiation of Transition Metal Dichalcogenides Using a Focused Ion Beam: Controlled Single‐Atom Defect Creation
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DOI：
10.1002/adfm.201904668
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发表时间：
2019-08
影响因子：
19
通讯作者：
Jothi Priyanka Thiruraman;Paul Masih Das;M. Drndić
中科院分区：
文献类型：
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作者：
Jothi Priyanka Thiruraman;Paul Masih Das;M. Drndić
用于纳米电子和纳米流体应用的2D材料的操纵和结构修改仍然是其工业规模实施的障碍。在这里，它表明，一个30千伏的聚焦离子束可用于工程缺陷和定制的原子，光电，和单层过渡金属二硫属化物（TMD）的结构特性。使用像差校正扫描透射电子显微镜来揭示钼（MoS2）和二硫化钨（WS2）中由1013至1016离子cm−2的辐照剂量引起的尺寸从单个原子到50 nm的缺陷的存在。在原子尺度上对多个器械的毫米长度尺度上的辐照区域进行采样和分析，以获得缺陷尺寸和密度的定量图像。精确的剂量值的计算，准确地捕捉辐照的二维材料中的缺陷的空间分布。声子和光电子材料性质的变化通过拉曼和光致发光光谱进行探测。还研究了缺陷性质对衬底和TMD材料等样品参数的依赖关系。这里显示的结果为TMD纳米器件的制造和加工提供了方法。
Manipulation and structural modifications of 2D materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial‐scale implementation. Here, it is demonstrated that a 30 kV focused ion beam can be utilized to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs). Aberration‐corrected scanning transmission electron microscopy is used to reveal the presence of defects with sizes from the single atom to 50 nm in molybdenum (MoS2) and tungsten disulfide (WS2) caused by irradiation doses from 1013 to 1016 ions cm−2. Irradiated regions across millimeter‐length scales of multiple devices are sampled and analyzed at the atomic scale in order to obtain a quantitative picture of defect sizes and densities. Precise dose value calculations are also presented, which accurately capture the spatial distribution of defects in irradiated 2D materials. Changes in phononic and optoelectronic material properties are probed via Raman and photoluminescence spectroscopy. The dependence of defect properties on sample parameters such as underlying substrate and TMD material is also investigated. The results shown here lend the way to the fabrication and processing of TMD nanodevices.