Work function engineering of single layer graphene by irradiation-induced defects
Work function engineering of single layer graphene by irradiation-induced defects
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DOI：
10.1063/1.4826642
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发表时间：
2013-10-21
影响因子：
4
通讯作者：
Park, Jeong Young
中科院分区：
文献类型：
--
作者：
Kim, Jong-Hun;Hwang, Jin Heui;Park, Jeong Young
我们报道了通过a-束辐照对单层石墨烯的电学性质的调谐。随着辐照后缺陷密度的增加，石墨烯的表面电势发生变化，如通过开尔文探针力显微镜和拉曼光谱研究所确定的。X射线光电子能谱研究表明，在大气条件下，随着辐照剂量的增加，促进了C/O键的形成。我们的研究结果表明，石墨烯的表面电位可以通过引入原子尺度的缺陷，通过高能粒子辐照工程。(C)2013 AIP Publishing LLC.
We report the tuning of electrical properties of single layer graphene by a-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles. (C) 2013 AIP Publishing LLC.