Growth of black arsenic phosphorus thin films and its application for field-effect transistors
Growth of black arsenic phosphorus thin films and its application for field-effect transistors
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DOI：
10.1088/1361-6528/abfc09
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发表时间：
2021-04
期刊：
影响因子：
3.5
通讯作者：
Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell
中科院分区：
文献类型：
--
作者：
Nezhueyotl Izquierdo;Jason C. Myers;Prafful Golani;Adonica De Los Santos;N. Seaton;S. Koester;S. Campbell
使用短程传输技术生长黑砷磷单晶，晶体尺寸可达 12 × 110 μm，厚度范围为 200 nm 至 2 μm。反应条件需要将锡、碘化锡 (IV)、灰砷和红磷放入真空石英安瓿中，并升温至最高温度 630 °C。使用拉曼光谱、X 射线衍射、X 射线光电子能谱、截面透射显微镜和电子背散射衍射对晶体结构和元素组成进行了表征。这些数据为了解增长机制提供了宝贵的见解。先前开发的 b-P 薄膜生长技术可以适用于 b-AsP 薄膜生长，只需稍微修改反应持续时间和反应物质量比。对在与薄膜生长过程相同的反应条件下生长的剥离体 b-AsP 制造的器件进行了表征，显示开关电流比为 102，阈值电压为 -60 V，在 V d = -0.9 V 和 V g = -60 V 时，峰值场效应空穴迁移率为 23 cm2 V−1 s−1。
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 × 110 μm and ranging from 200 nm to 2 μm thick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of −60 V, and a peak field-effect hole mobility of 23 cm2 V−1 s−1 at V d = −0.9 V and V g = −60 V.