Insights into the Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition of Thin Films from Methyldisiloxane Precursors
Insights into the Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition of Thin Films from Methyldisiloxane Precursors
复制标题
深入了解甲基二硅氧烷前体薄膜的大气压等离子体增强化学气相沉积
DOI：
10.1002/ppap.201100157
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发表时间：
2012
影响因子：
3.5
通讯作者：
F. Fracassi
中科院分区：
文献类型：
--
作者：
F. Fanelli;S. Lovascio;R. D'agostino;F. Fracassi
本工作描述了在大气压下利用介质阻挡放电在大气压下增强化学气相沉积薄膜的方法。介质阻挡放电分别为六甲基二硅氧烷、五甲基二硅氧烷和1，1，3，3-四甲基二硅氧烷。研究了甲基二硅氧烷的化学结构和氧/甲基二硅氧烷进料比的影响，以期对常压下的有机硅等离子体化学有更深入的了解。FT-IR和XPS分析表明，涂层的碳含量取决于前驱体分子中甲基的数量；对于使用PMDSO和TMDSO获得的涂层，Si-H键的存在似乎进一步提高了碳的去除。废气的气相色谱-质谱分析可以评估前体的消耗，并对等离子体活化形成的副产物(如硅烷、硅氧烷、硅醇)进行定性定量测定。这一结果被用来提出关于不同反应途径对沉积机理的贡献的假设。
This work describes the plasma-enhanced chemical vapor deposition of thin films at atmospheric pressure using dielectric barrier discharges fed with argon, oxygen and different methyldisiloxanes, i.e., hexamethyldisiloxane, pentamethyldisiloxane, and 1,1,3,3-tetramethyldisiloxane. The influence of the methyldisiloxane chemical structure and of the oxygen/ methyldisiloxane feed ratio is investigated in order to provide insights into the organosilicon plasma chemistry at atmospheric pressure. As expected the FT-IR and XPS analyses show that the carbon content of the coatings depends on the number of methyl groups in the precursor molecule; in the case of coatings obtained with PMDSO and TMDSO carbon removal seems to be further enhanced by the presence of Si H bonds. Gaschromatography-mass spectrometry analyses of the exhaust gas allow to assess the precursor depletion and to perform the quali-quantitative determinationof by-products (e.g., silanes, siloxanes, silanols) formed by plasma activation. The results are exploited to rise hypotheses on the contribution of the different reaction pathways on the deposition mechanism.