Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate
复制标题
纳米图案蓝宝石衬底上石墨烯辅助准范德华外延用于紫外发光二极管的 AlN 薄膜
DOI：
10.1063/1.5081112
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发表时间：
2019-03-04
影响因子：
4
通讯作者：
Wei, Tongbo
中科院分区：
文献类型：
--
作者：
Chang, Hongliang;Chen, Zhaolong;Wei, Tongbo
我们报告了通过石墨烯辅助的准范德华外延在纳米图案蓝宝石基板（NPSS）上生长高质量 AlN 薄膜，这使得快速聚结能够缩短生长时间。由于石墨烯（Gr）的存在，AlN在NPSS上倾向于二维横向扩展，导致AlN外延层位错密度和应变释放降低。通过第一性原理计算，我们证实Gr可以降低表面迁移势垒并促进金属Al原子的横向迁移。此外，通过插入Gr中间层，深紫外发光二极管（DUV-LED）的电致发光结果显示出在280nm处的发射大大增强。目前的工作可能为解决高效率 DUV-LED 的瓶颈提供潜力。我们报道了通过石墨烯辅助准范德华外延在纳米图案蓝宝石基板（NPSS）上生长高质量 AlN 薄膜，这使得快速聚结能够缩短生长时间。由于石墨烯（Gr）的存在，AlN在NPSS上倾向于二维横向扩展，导致AlN外延层位错密度和应变释放降低。通过第一性原理计算，我们证实Gr可以降低表面迁移势垒并促进金属Al原子的横向迁移。此外，通过插入Gr中间层，深紫外发光二极管（DUV-LED）的电致发光结果显示出在280nm处的发射大大增强。目前的工作可能为解决高效率 DUV-LED 的瓶颈提供潜力。
We report the growth of high-quality AlN films on nano-patterned sapphire substrates (NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid coalescence to shorten the growth time. Due to the presence of graphene (Gr), AlN tends to be two-dimensional laterally expanded on the NPSS, leading to the reduction of dislocation density and strain release in the AlN epitaxial layer. Using first-principles calculations, we confirm that Gr can reduce the surface migration barrier and promote the lateral migration of metal Al atoms. Furthermore, the electroluminescence results of deep ultraviolet light emitting diodes (DUV-LEDs) have exhibited greatly enhanced emission located at 280 nm by inserting the Gr interlayer. The present work may provide the potential to solve the bottleneck of high efficiency DUV-LED.We report the growth of high-quality AlN films on nano-patterned sapphire substrates (NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid coalescence to shorten the growth time. Due to the presence of graphene (Gr), AlN tends to be two-dimensional laterally expanded on the NPSS, leading to the reduction of dislocation density and strain release in the AlN epitaxial layer. Using first-principles calculations, we confirm that Gr can reduce the surface migration barrier and promote the lateral migration of metal Al atoms. Furthermore, the electroluminescence results of deep ultraviolet light emitting diodes (DUV-LEDs) have exhibited greatly enhanced emission located at 280 nm by inserting the Gr interlayer. The present work may provide the potential to solve the bottleneck of high efficiency DUV-LED.