Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes
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DOI：
10.1109/55.974580
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发表时间：
2001-12-01
影响因子：
4.9
通讯作者：
Jackson, TN
中科院分区：
文献类型：
--
作者：
Gundlach, DJ;Jia, LL;Jackson, TN
我们使用化学修饰的源极和漏极接触制备了五苯并五苯有源层有机薄膜晶体管(OTFT)，具有更好的接触和线性区域特性。在重掺杂、热氧化的单晶硅衬底上制备的OTFT在漏源极电压为-0.1V、通断电流比大于10(7)、亚阈值斜率低至0.7V/ten时，场效应迁移率大于0.5 cm(2)/V-S。
We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm(2)/V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10(7), and subthreshold slope as low as 0.7 V/decade.