Layer-by-layer self-assembled conductive thin films for MEMS applications

Layer-by-layer self-assembled conductive thin films for MEMS applications
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DOI:
10.1016/j.sna.2005.10.038
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发表时间:
2006-01-26
影响因子:
4.6
通讯作者:
Maboudian, R
Maboudian, R
中科院分区:
工程技术3区
文献类型:
--
作者:
Bush, B;Xu, GH;Maboudian, R

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研究了一种基于聚阴离子和聚阳离子聚合物材料交替沉积在氧化硅衬底上的层层自组装工艺,用于MEMS器件的抗静电和电气应用。本研究中的聚阴离子和聚阳离子分别为磺化聚苯乙烯和聚吡咯。考察了FeCl3氧化剂浓度的影响。结果表明,氧化剂浓度越高,制备的薄膜的电阻率越低,在30 mM FeCl3溶液中制备的薄膜的电阻率为0.05欧加厘米,而在6 mM FeCl3溶液中制备的薄膜的电阻率为0.15欧加厘米量级。发现掺杂对甲苯磺酸对电阻率的影响很小,尽管为了提高结构和热稳定性,掺杂剂的使用仍然是非常理想的。利用原子力显微镜和电场力显微镜观察到薄膜的形貌为结节状结构,晶粒度约为28 nm,表面电势分布为60 mV。最后,通过与十八烷基硫酸钠的反应表明,吡咯薄膜的水接触角从46度增加到85度。(C)2005 Elsevier B.V.保留所有权利。
A layer-by-layer self-assembly process is investigated based on the alternate deposition of polyanion and polycation polymer materials onto oxidized silicon substrates for anti-static and electrical applications in MEMS devices. The polyanion and polycation in this study are sulfonated polystyrene and polypyrrole, respectively. The influence of FeCl3 oxidant concentration is examined. It is found that the films prepared with higher oxidant concentrations exhibit lower resistivity; films prepared at 30 mM FeCl3 show a resistivity of 0.05 Omega cm while those prepared at 6 mM FeCl3 have values on the order of 0.15 Omega cm. The influence of doping with p-toluene sulfonic acid on the resistivity is found to be quite small, although the use of the dopant remains highly desirable for increased structural and thermal stability. Using atomic and electric force microscopy, the film morphology is found to exhibit nodular structures with an approximate grain size of 28 nm and 60 mV surface potential distribution. Finally, through reaction with octadecyl-sulfate sodium, the water contact angle of the pyrrole films have been shown to increase from 46 degrees to 85 degrees. (C) 2005 Elsevier B.V. All rights reserved.