High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide
High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide
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DOI：
10.1364/ol.476644
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发表时间：
2023-03-01
期刊：
影响因子：
3.6
通讯作者：
Yu, Paul K. L.
中科院分区：
文献类型：
--
作者：
Chang, Li-Yang Sunny;Pappert, Steve;Yu, Paul K. L.
研究了等离子体增强化学气相沉积（PECVD）法制备的富硅非晶碳化硅（a-SiC）薄膜的热光系数（TOC）。我们发现，TOC的薄膜增加，其硅含量的增加。测量到TOC的三倍以上的改善，达到高达1.88 × 10-4 ℃-1的TOC，这与晶体硅的TOC相当。通过将富硅a-SiC微环结构与NiCr加热器相结合，也证明了一种有效的热光移相器。在1550 nm波长处测得调谐效率Ppi低至4.2 mW，调谐率为0.117 nm/mW。这些发现使得富硅a-SiC成为光子集成电路中热光应用的良好候选材料。(c)2023光学出版集团
In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition (PECVD) was characterized. We found that the TOC of the film increases as its silicon content increases. A more than threefold improvement in the TOC was measured, reaching a TOC as high as 1.88 x 10-4 degrees C-1, which is comparable to that of crystalline silicon. An efficient thermo-optic phase shifter has also been demonstrated by integrating the silicon-rich a-SiC micro-ring structure with a NiCr heater. Tunability of 0.117 nm/mW was demonstrated, and a corresponding tuning efficiency P pi as low as 4.2 mW has been measured at an optical wavelength of 1550 nm. These findings make silicon-rich a-SiC a good candidate material for thermo-optic applications in photonic integrated circuits.(c) 2023 Optica Publishing Group