Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias
Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias
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DOI：
10.1063/1.4936780
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发表时间：
2015-12-07
影响因子：
3.2
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
--
作者：
Pooth, Alexander;Uren, Michael J.;Kuball, Martin
研究了氮化镓基异质结构场效应晶体管（HFET）中碳掺杂氮化镓缓冲层在正负衬底偏压下的电荷捕获和输运。通过热生成的空穴，可以看到碳掺杂区电荷重新分布的明显证据，在正偏压期间观察到电子注入和捕获。仿真结果与实验结果非常吻合。结果表明，这些效应是碳掺杂氮化镓所固有的，需要加以控制，以提供可靠和高效的氮化镓基功率hfet。(C) 2015 AIP出版有限责任公司
Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs. (C) 2015 AIP Publishing LLC.