Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four-Junction (UMM4J) Solar Cells
Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four-Junction (UMM4J) Solar Cells
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直立变质四结（UMM4J）太阳能电池的电子辐照效应和缺陷分析
DOI：
10.1002/pssa.202100704
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Huo Mingxue
中科院分区：
文献类型：
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作者：
Zhang Yanqing;Zhou Jiaming;Liu Chaoming;Qi Chunhua;Wang Tianqi;Ma Guoliang;Zhou Bin;Xiao Liyi;Huo Mingxue
在此，对AlGaInP（1.89 eV）/AlInGaAs（1.45 eV）/InGaAs（1.14 eV）/Ge（0.67 eV）直立变质四结（UMM 4J）太阳能电池及其上部三个关键子电池进行I-MeV电子辐照。光IV（LIV），外量子效率（EQE），和深能级瞬态光谱（DLTS）的测量实施分析的电性能的退化和演化的缺陷的UMM 4J太阳能电池。的LIV结果表明，短路电流（Isc），开路电压（Voc），和最大功率（Pmax）作为电子注量的对数变化的函数退化。EQE曲线证实了AlGaInP（1.89 eV）子电池的优异抗辐照特性。在AlGaInP子电池中检测到三种类型的电子陷阱E1（Ec-0.16 eV）、E2（Ec-0.47 eV）和E3（Ec-0.55 eV）。在AlInGaAs子电池中发现了两种类型的空穴陷阱H1（Ev+ 0.35 eV）和H2（Ev+ 0.70 eV），在InGaAs子电池中观察到两种类型的空穴陷阱H3（Ev+ 0.05 eV）和H4（Ev+ 0.36 eV）。用屏蔽相对论方法计算了1-MeV电子的非电离能量损失（NIEL）。缺陷浓度与位移剂量呈近似线性关系。
Herein, 1‐MeV electron irradiation is conducted to the AlGaInP (1.89 eV)/AlInGaAs (1.45 eV)/InGaAs (1.14 eV)/Ge (0.67 eV) upright metamorphic four‐junction (UMM4J) solar cell and its upper three key subcells. Light IV (LIV), external quantum efficiency (EQE), and deep level transient spectroscopy (DLTS) measurements are implemented to analyze the degradation of electric properties and evolution of defects of the UMM4J solar cell. The LIV results illustrate that the short circuit current (Isc), open circuit voltage (Voc), and maximum power (Pmax) degrade as a function of the logarithmic change of the electron fluence. EQE curves confirm the excellent anti‐irradiation characteristic of the AlGaInP (1.89 eV) subcell. Three types of electron traps E1(Ec–0.16 eV), E2(Ec–0.47 eV), and E3(Ec–0.55 eV) are detected in the AlGaInP subcell. Two types of hole traps H1(Ev+ 0.35 eV) and H2(Ev+ 0.70 eV) are discovered in the AlInGaAs subcell and two types of hole traps H3(Ev+ 0.05 eV) and H4(Ev+ 0.36 eV) are observed in the InGaAs subcell. Nonionizing energy loss (NIEL) of 1‐MeV electrons in are calculated via Screened Relativist method. The defect concentrations show an approximately linear relationship with the displacement dose.