Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN
Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN
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电感耦合等离子体刻蚀GaN的正电子湮没和阴极发光研究
DOI：
10.1002/pssb.201451498
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
A. Uedono
中科院分区：
文献类型：
--
作者：
K. Kataoka;M. Kanechika;T. Narita;Y. Kimoto;A. Uedono
利用正电子湮没和阴极发光（CL）技术研究了用Cl2和BCl3混合气体的电感耦合等离子体（ICP）对Mg掺杂和Si掺杂的GaN的刻蚀损伤以及随后在N2中退火的影响。通过比较CL强度和注入正电子的扩散长度，分别研究了ICP刻蚀或随后的退火引起的非辐射缺陷浓度和能带弯曲形状的变化。对于Mg掺杂的GaN，CL光谱显示蚀刻使近表面区域的Mg受体失活。在900 °C下退火后，Mg受体被再活化。对于Si掺杂的GaN，蚀刻引入了中性空位型缺陷，并且在900 °C下退火后，蚀刻诱导的缺陷几乎消失。然而，有残留的非辐射缺陷的顶面，这是与表面的费米能级位置的变化。
Etching damage induced by inductively coupled plasma (ICP) with a mixture of Cl 2 and BCl 3 gases and the effect of subsequent annealing in N 2 were studied through positron annihilation and cathodoluminescence (CL) for Mg‐doped and Si‐doped GaN. The changes in the concentration of nonradiative defects and in the shape of band bending caused by ICP etching or subsequent annealing were studied by comparing the CL intensities and the diffusion lengths of implanted positrons, respectively. For Mg‐doped GaN, CL spectra revealed that etching inactivated the Mg acceptors at the near‐surface region. After annealing at 900 °C, the Mg acceptors were reactivated. For Si‐doped GaN, etching introduced neutral vacancy‐type defects, and after annealing at 900 °C, the etching‐induced defects almost disappeared. However, there were residual nonradiative defects on the top surface that were associated with a change in the surface's Fermi level position.
GeCu_2Te_3的硬X射线光电子能谱研究
DOI：
--
发表时间：
2012
期刊：
Proceeding of 24^<th> Symposium on Phase Change Oriented Science 2012
影响因子：
--
作者：
小林啓介;小畠雅明;齊藤雄太;須藤祐司;小池淳一
通讯作者：
小池淳一