Optical and transport properties of GaGeTe single crystals
Optical and transport properties of GaGeTe single crystals
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DOI：
10.1016/j.jcrysgro.2013.05.036
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发表时间：
2013-10-01
影响因子：
1.8
通讯作者：
Lostak, Petr
中科院分区：
文献类型：
--
作者：
Kucek, Vladimir;Drasar, Cestmir;Lostak, Petr
用改进的Bridgman法生长了GaGeTe单晶。用X射线衍射仪对所制备的样品进行了表征，并通过测量等离子体共振区的反射率和测量MIR、NIR和VIS区的透过率光谱对样品进行了表征。等离子体共振分析表明，GaGeTe单晶处于近简并态。吸收系数α(2)的平方随入射辐射能量的变化表明，α的两个明显的最小值分别位于约0.5 eV和约1.0 eV处。从长波长边缘的斜率估计了自由载流子散射机制。单晶GaGeTe的输运测量证据是一种简并的p型半导体，其空穴浓度为5.10(19)cm(-3)。这些洞的流动性相当低。(C)2013爱思唯尔B.V.保留所有权利。
GaGeTe single crystals were grown using a modified Bridgman method. The prepared samples were characterized by X-ray diffraction and investigated using measurements of the reflectance in the plasma-resonance-frequency region and measurements of the transmittance spectra in the MIR, NIR and VIS regions. An analysis of the plasma resonance indicates a near-degenerate state in the GaGeTe single crystal. The variation of the square of the absorption coefficient, alpha(2), as a function of incident radiation energy showed two distinct minima of alpha located at approximate to 0.5 and approximate to 1.0 eV. The free carrier scattering mechanism was estimated from the slope of the long-wavelength edge. The transport measurement evidence of single-crystalline GaGeTe is a degenerate p-type semiconductor with a concentration of holes of p congruent to 5.10(19) cm(-3). The mobility of the holes is rather low. (C) 2013 Elsevier B.V. All rights reserved.